NIGERIAN JOURNAL OF SCIENCE AND ENVIRONMENT
Journal of the Faculties of Science and Agriculture, Delta State University, Abraka, Nigeria
ISSN: 1119-9008
DOI: 10.5987/UJ-NJSE
Email: njse@universityjournals.org
COMPUTATION OF POSITRON IMPLANTATION PROFILE IN SOLIDS
DOI: 10.5987/UJ-NJSE.16.057.1 | Article Number: 6F881F8 | Vol.14 (1) - July 2016
Authors: Olubosede O. , Adeshakin G. E. and Osiele O. M.
Keywords: Positrons, solids, implantation profile, penetration depth, computing
Positron implantation profile in solids is very vital in understanding the process of positron annihilation in solids. In this work, a model for positron implantation profile in solids is presented; a computer program for computing and analyzing positron implantation profile in solids based on the model was developed and implemented. The program was used to compute and analyze positron implantation profile in aluminium, copper, steel and silicon. The results obtained revealed that the height of the positron implantation profile depends inversely on the incident positron energy while the implantation depth depends directly on the incident positron energy. Also, positron implantation profile depends directly on the nature of the solid. The results obtained in this work are in one to one agreement with the experimental positron implantation profiles in solids showing the predictability power of the model.
Bandzuch, P., Kristiak., J., Sausa, O. and Zrubcova, J.(2000). Direct computation of the free volume fraction in amorphous polymers and positron lifetime measurements. Physical Review B, 61(13): 8784 – 8792.
Brusa, R.S., Karwasz, G.P., Tiengo,N., Zecca, A., Corni, F, Tonini, R. and Ottaviani (2000). Formation of Vacancy clusters and cavities in He-implanted silicon studied by slow –positron annihilation spectroscopy. Physical Review B, 61(15): 10154 -10166.
Chakraverty, G., Mitra, S., Mandal, K., Nambissan, P.M.G. and Chattopadhyay, S. (2005). Positron annihilation studies of some anomalous features of NiFe2O4 nanaocrystals grown in SiO2. Physical Review B, 71: 024115-1 -024115 -8.
Chen, Z.Q., Wang, Z., and Wang, S.J. (2000). Application of positron lifetime distribution to the discrimination of defects in semiconductors .Nuclear Instruments and methods in Physics Research B, 160: 139 – 148.
Cizek, J., Melikhova, O., Prochazka, I., Kuriplach, J., Stulikova, I., Vostrg, P. and Faltus, J. (2005). Annealing process in quenched Al-Sn allos: A positron annihilation study. Physical Review B 71: 064106 -1 – 064106 – 13.
Coleman, P., (1999). Positron Beams and their Applications. World Scientific Publishing Co. Pte. Ltd.: 6 – 8.
Grynszpan, R.I., Anward, W., Brauer, G., and Coleman, P.G. (2007). Positron depth profiling in solid surface Layers. Annals of. Chemical Science, 32(4): 365 – 382.
Krause-Rehberg, R. and Leipner, H. S. (1999). Positron annihilation in Semiconductors. Springer –Verlag Berlin Heidelberg : 8 – 26.
Ling, C.C., Shek, Y.F., Huang, A.P., Fung, S. and Beling, C.D. (1999). Electric field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique. Physical Review B, 59( 8): 5751 -5758.
Osiele, O. M. and Akpomedaye, E. E. (2009). Model for structural defect characterization of metals based on positron beam technique. Journal of the Nigerian Association of Mathematical Physics, 14: 217 – 222.
Osiele, O.M., Britton, D.T., Hating, M., Sperr, P., Topic, M. Shaheen, S.E. and Branz, H. M. (2004). Defect structural Characterization of Organic polymers. Journals of non- Crystalline Solids, 338 – 340: 612 – 616.
Porto, A.O., Magalhaes, W.F., Fernandes, N. G. and Machado, J.C. (1997). Positron annihilation study in binary molecular solid solutions of metal acetylacetonate complexes using positron annihilation lifetime (PAL) and Doppler broadening spectroscopies. Chemical Physics, 221: 199 – 208.
Puska, M. J. and R. M. Nieminen (1994). Theory of positrons in solids and on solid surfaces. Reviews of Modern Physics, 66(3): 841 – 897.
Saleh, A. S., Taylor, J. W., Rice-Evans P. C. (1999). The ROYPROF Program for analyzing positron profiling data obtained from variable energy beams. Applied Surface Science, 149: 87 – 96.
Taylor, J. W., Saleh, A. S., Rice-Evans P. C., Knights, A. P. and Jeynes, C. (1999). Depth Profiling of defects in nitrogen implanted silicon using slow positron beam. Applied Surface Science, 149: 175 -180.